Through-Beam Measurement of Semiconductor Wafer Thickness with Spectral Confocal Displacement Sensor

Through-Beam Measurement of Semiconductor Wafer Thickness with Spectral Confocal Displacement Sensor
Through-Beam Measurement of Semiconductor Wafer Thickness with Spectral Confocal Displacement Sensor

Through-Beam Measurement of Semiconductor Wafer Thickness with Spectral Confocal Displacement Sensor

Industry pain points and demands

As the foundational substrate for semiconductor chips, the thickness of a wafer plays a pivotal role in determining the chip's performance, reliability, and final yield rate. Accurate wafer thickness measurement ensures manufacturing stability and consistency, which ultimately enhances the overall product quality.

 

Semiconductor wafer thickness directly influences chip performance and manufacturing consistency, posing several challenges:

 

 Material Variability: Wafers with diverse thin-film layers, including highly transparent and reflective materials, create unstable signal feedback.

 Precision Requirements: Micron-level accuracy is critical for ensuring product quality and yield rates.

 Speed: Accurate measurements must be maintained on high-speed production lines.

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SinceVision Solution: SCI04025 Spectral Confocal Displacement Sensor

01High Sampling Rate: Operates at up to 33kHz, delivering stable detection for high-speed and vibrating objects.
02Exceptional Material Handling: Measures wafers with varying properties, such as high transparency or low reflectance, with uncompromised precision.
03Ultra-High Accuracy: Achieves micron-level measurements, ensuring reliable production and enhanced quality control.

Camera Selection

Fixture modelSCI04025
controllerSCI501A/SCI502A/SCI501B/SCI502B
Fixture ModelSCI-01
Spot size12μm25.2μm
Measuring range4mm
Working distance16mm
Axial resolution0.006μm
straightness±0.8μm
Angle characteristic±25°
Minimum measurable thickness of transparent object130μm  
diameter30mm
length114mm
weight95g